Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

द्वारा F. Roslan, Ameer, Salehuddin, F., M. Zain, A.S, Kaharudin, K.E, Ahmad, I., Hazura, H., Hanim, A.R, Idris, S.K
प्रकाशित 2019

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

द्वारा F. Roslan, Ameer, Salehuddin, F., M.Zain, A.S, Kaharudin, K.E, Hazura, H., Hanim, A.R, Idris, S. K, Zarina, B.Z, Maheran A.H, Afifah
प्रकाशित 2018