Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

od F. Roslan, Ameer, Salehuddin, F., M. Zain, A.S, Kaharudin, K.E, Ahmad, I., Hazura, H., Hanim, A.R, Idris, S.K
Wydane 2019

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

od F. Roslan, Ameer, Salehuddin, F., M.Zain, A.S, Kaharudin, K.E, Hazura, H., Hanim, A.R, Idris, S. K, Zarina, B.Z, Maheran A.H, Afifah
Wydane 2018