Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

за авторством F. Roslan, Ameer, Salehuddin, F., M. Zain, A.S, Kaharudin, K.E, Ahmad, I., Hazura, H., Hanim, A.R, Idris, S.K
Опубліковано 2019

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

за авторством F. Roslan, Ameer, Salehuddin, F., M.Zain, A.S, Kaharudin, K.E, Hazura, H., Hanim, A.R, Idris, S. K, Zarina, B.Z, Maheran A.H, Afifah
Опубліковано 2018