Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

de réir F. Roslan, Ameer, Salehuddin, F., M. Zain, A. S., E. Kaharudin, K., Ahmad, I.
Foilsithe / Cruthaithe 2020

Work function variations on electrostatic and RF performances of JLSDGM Device

de réir E. Kaharudin, K K., Salehuddin, F., M. Zain, A. S., Roslan, Ameer F., Ahmad, I
Foilsithe / Cruthaithe 2021

Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

de réir F. Roslan, Ameer, Salehuddin, F., M. Zain, A.S, Kaharudin, K.E, Ahmad, I., Hazura, H., Hanim, A.R, Idris, S.K
Foilsithe / Cruthaithe 2019

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

de réir F. Roslan, Ameer, Salehuddin, F., M.Zain, A.S, Kaharudin, K.E, Hazura, H., Hanim, A.R, Idris, S. K, Zarina, B.Z, Maheran A.H, Afifah
Foilsithe / Cruthaithe 2018