Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

за авторством F. Roslan, Ameer, Salehuddin, F., M. Zain, A. S., E. Kaharudin, K., Ahmad, I.
Опубліковано 2020

Work function variations on electrostatic and RF performances of JLSDGM Device

за авторством E. Kaharudin, K K., Salehuddin, F., M. Zain, A. S., Roslan, Ameer F., Ahmad, I
Опубліковано 2021

Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

за авторством F. Roslan, Ameer, Salehuddin, F., M. Zain, A.S, Kaharudin, K.E, Ahmad, I., Hazura, H., Hanim, A.R, Idris, S.K
Опубліковано 2019

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

за авторством F. Roslan, Ameer, Salehuddin, F., M.Zain, A.S, Kaharudin, K.E, Hazura, H., Hanim, A.R, Idris, S. K, Zarina, B.Z, Maheran A.H, Afifah
Опубліковано 2018