Estimation of power and delay in CMOS circuits using LCT

With a rapid growth in semiconductor Industry, complex applications are being implemented using small size chips, with the use of Complementary Metal Oxide Semi-Conductors (CMOS). With the introduction of new Integrated Circuit (IC) technology, the speed of the circuits has been increased by around...

Full description

Saved in:
Bibliographic Details
Main Authors: Aylapogu, Pramod kumar (Author), Aditya, B.L.V.S.S (Author), Sony, G. (Author), Prasanna, Ch (Author), Satish, A (Author)
Format: EJournal Article
Published: Institute of Advanced Engineering and Science, 2019-05-01.
Subjects:
Online Access:Get fulltext
Get fulltext
Tags: Add Tag
No Tags, Be the first to tag this record!
LEADER 02751 am a22004333u 4500
001 0 nhttps:__ijeecs.iaescore.com_index.php_IJEECS_article_downloadSuppFile_13839_2147
042 |a dc 
100 1 0 |a Aylapogu, Pramod kumar  |e author 
100 1 0 |e contributor 
700 1 0 |a Aditya, B.L.V.S.S  |e author 
700 1 0 |a Sony, G.  |e author 
700 1 0 |a Prasanna, Ch  |e author 
700 1 0 |a Satish, A  |e author 
700 1 0 |a Sony, G.  |e author 
700 1 0 |a Sony, G.  |e author 
700 1 0 |a Prasanna, Ch  |e author 
700 1 0 |a Prasanna, Ch  |e author 
700 1 0 |a Satish, A  |e author 
700 1 0 |a Satish, A  |e author 
245 0 0 |a Estimation of power and delay in CMOS circuits using LCT 
260 |b Institute of Advanced Engineering and Science,   |c 2019-05-01. 
500 |a https://ijeecs.iaescore.com/index.php/IJEECS/article/view/13839 
520 |a With a rapid growth in semiconductor Industry, complex applications are being implemented using small size chips, with the use of Complementary Metal Oxide Semi-Conductors (CMOS). With the introduction of new Integrated Circuit (IC) technology, the speed of the circuits has been increased by around 30%. But it was observed that for every two years, the power dissipation of a circuit doubles. The main reason for this power dissipation is leakage currents in the circuit. To reduce these leakage currents, we can reduce the width of the device. In addition to this, we can use lector techniques that use Leakage Control Transistors (LCT) and High Threshold Leakage Control Transistors(HTLCT). In this paper, we present a circuit technique that uses 130 nano-meter CMOS VLSI circuits that use two extra transistors to mitigate the leakage currents. The estimation of power and delay will be discussed using LCT's and HTLCT's 
540 |a Copyright (c) 2019 Institute of Advanced Engineering and Science 
540 |a http://creativecommons.org/licenses/by-nc/4.0 
546 |a eng 
690
690 |a VLSI, CMOS, IC, Leakage Current, LCT, HTLCT, Power Dissipation, Time Delay 
655 7 |a info:eu-repo/semantics/article  |2 local 
655 7 |a info:eu-repo/semantics/publishedVersion  |2 local 
655 7 |2 local 
786 0 |n Indonesian Journal of Electrical Engineering and Computer Science; Vol 14, No 2: May 2019; 990-998 
786 0 |n 2502-4760 
786 0 |n 2502-4752 
786 0 |n 10.11591/ijeecs.v14.i2 
787 0 |n https://ijeecs.iaescore.com/index.php/IJEECS/article/view/13839/11967 
787 0 |n https://ijeecs.iaescore.com/index.php/IJEECS/article/downloadSuppFile/13839/2147 
856 4 1 |u https://ijeecs.iaescore.com/index.php/IJEECS/article/view/13839/11967  |z Get fulltext 
856 4 1 |u https://ijeecs.iaescore.com/index.php/IJEECS/article/downloadSuppFile/13839/2147  |z Get fulltext