Effect of Temperature on The Electron Concentration of Crystalline GaAs Semiconductor Based on The p-n Junction Due to Deformation Potential Scattering
The electrical characteristics of semiconductor materials can be predicted based on the transport of charge carriers within the material. Under room temperature, the electrical properties of semiconductor materials can be exploited by knowing the value of their electron mobility to predict the numbe...
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| Główni autorzy: | , , , |
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| Format: | EJournal Article |
| Wydane: |
Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember,
2019-05-02.
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| Hasła przedmiotowe: | |
| Dostęp online: | Get Fulltext |
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| Sygnatura: |
A1234.567 |
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| Egzemplarz 1 | Dostępne |