A new gate drive for a single-phase matrix converter

This paper presents the new generation of advanced gate driver circuit based on IR2110 device for a Single-Phase Matrix Converter (SPMC) circuit topology that uses MOSFETs or IGBTs switches. The new generation of gate drive circuit uses less number of components, since a single IR2110 device can dri...

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Main Authors: Baharom, Rahimi (Author), Rahman, Nor Farahaida Abdul (Author), Hidayat, Muhamad Nabil (Author), Muhammad, Khairul Safuan (Author), Seroji, Mohammad Nawawi (Author), Yahaya, Nor Zaihar (Author)
Format: EJournal Article
Published: Institute of Advanced Engineering and Science, 2020-06-01.
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001 IJPEDS_20553_13229
042 |a dc 
100 1 0 |a Baharom, Rahimi  |e author 
100 1 0 |e contributor 
700 1 0 |a Rahman, Nor Farahaida Abdul  |e author 
700 1 0 |a Hidayat, Muhamad Nabil  |e author 
700 1 0 |a Muhammad, Khairul Safuan  |e author 
700 1 0 |a Seroji, Mohammad Nawawi  |e author 
700 1 0 |a Yahaya, Nor Zaihar  |e author 
245 0 0 |a A new gate drive for a single-phase matrix converter 
260 |b Institute of Advanced Engineering and Science,   |c 2020-06-01. 
500 |a https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/20553 
520 |a This paper presents the new generation of advanced gate driver circuit based on IR2110 device for a Single-Phase Matrix Converter (SPMC) circuit topology that uses MOSFETs or IGBTs switches. The new generation of gate drive circuit uses less number of components, since a single IR2110 device can drive two power switches, thus reduce power losses and minimize the complexity of conventional circuit. An additional isolation of the upper and lower sides of IR2110 device features additional protection to the proposed gate drive system. As a result, the proposed gate drive circuit just uses four IR2110 gate drives in order to control eight switches of SPMC circuit, thus, solve the conventional bulky gate drive circuit problem in SPMCs operation.  This is in line with the international power electronic technology road-maps to reduce losses, cost, volume, therefore to raise up the power density of power electronics converters. Validation have been done through the experimental test-rig. As a result, such new theoretical enhancements can be used as a novel foundation of future high power density of SPMC circuit topology and in-line with the Fourth Industrial Revolution (IR 4.0) which were characterized mainly by advances in technology 
540 |a Copyright (c) 2019 Institute of Advanced Engineering and Science 
540 |a http://creativecommons.org/licenses/by-sa/4.0 
546 |a eng 
655 7 |a info:eu-repo/semantics/article  |2 local 
655 7 |a info:eu-repo/semantics/publishedVersion  |2 local 
655 7 |2 local 
786 0 |n International Journal of Power Electronics and Drive Systems (IJPEDS); Vol 11, No 2: June 2020; 823-826 
786 0 |n 2722-256X 
786 0 |n 2088-8694 
786 0 |n 10.11591/ijpeds.v11.i2 
787 0 |n https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/20553/13229 
856 4 1 |u https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/20553/13229  |z Get Fulltext