Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich
The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative couple...
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| Format: | Book Chapter |
| Published: |
KIT Scientific Publishing
2013
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| Subjects: | |
| Online Access: | Get Fullteks DOAB: description of the publication |
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| Summary: | The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied. |
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| Physical Description: | 1 electronic resource (XIII, 217 p. p.) |
| ISBN: | KSP/1000037898 9783731501619 |
| Access: | Open Access |