Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key...

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Hlavní autor: Seo, Jung-Hun (auth)
Médium: Kapitola
Vydáno: MDPI - Multidisciplinary Digital Publishing Institute 2019
Témata:
ohmic contact
n/a
MESFET
optical band gap
wide-bandgap semiconductor
annealing temperature
junction termination extension (JTE)
channel length modulation
silicon carbide (SiC)
amorphous InGaZnO (a-IGZO)
light output power
GaN
electrochromism
large signal performance
passivation layer
4H-SiC
positive gate bias stress (PGBS)
asymmetric power combining
ultrahigh upper gate height
high electron mobility transistors
space application
gallium nitride (GaN)
phase balance
edge termination
distributed Bragg reflector
cathode field plate (CFP)
ammonothermal GaN
anode field plate (AFP)
W band
GaN high electron mobility transistor (HEMT)
1T DRAM
growth of GaN
tungsten trioxide film
thin-film transistor (TFT)
micron-sized patterned sapphire substrate
power added efficiency
T-anode
analytical model
AlGaN/GaN
harsh environment
high-temperature operation
amplitude balance
buffer layer
characteristic length
Ku-band
DIBL effect
I-V kink effect
flip-chip light-emitting diodes
high electron mobility transistors (HEMTs)
power amplifier
sidewall GaN
external quantum efficiency
breakdown voltage (BV)
threshold voltage (Vth) stability
regrown contact
AlGaN/GaN HEMT
TCAD
high electron mobility transistor (HEMT)
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