Physics and Technology of Silicon Carbide Devices

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for materia...

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Other Authors: Hijikata, Yasuto (Editor)
Format: Book Chapter
Published: IntechOpen 2012
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020 |a 9789535109174 
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041 0 |a English 
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072 7 |a PNFS  |2 bicssc 
100 1 |a Hijikata, Yasuto  |4 edt 
700 1 |a Hijikata, Yasuto  |4 oth 
245 1 0 |a Physics and Technology of Silicon Carbide Devices 
260 |b IntechOpen  |c 2012 
300 |a 1 electronic resource (414 p.) 
506 0 |a Open Access  |2 star  |f Unrestricted online access 
520 |a Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness. 
540 |a Creative Commons  |f https://creativecommons.org/licenses/by/3.0/  |2 cc  |4 https://creativecommons.org/licenses/by/3.0/ 
546 |a English 
650 7 |a Spectrum analysis, spectrochemistry, mass spectrometry  |2 bicssc 
653 |a Solid state chemistry 
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856 4 0 |a www.oapen.org  |u https://directory.doabooks.org/handle/20.500.12854/66345  |7 0  |z DOAB: description of the publication