Feature Papers in Electronic Materials Section
This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelec...
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| Format: | Book Chapter |
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Basel
MDPI - Multidisciplinary Digital Publishing Institute
2022
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| Online Access: | Get Fullteks DOAB: description of the publication |
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| LEADER | 04824naaaa2201369uu 4500 | ||
|---|---|---|---|
| 001 | doab_20_500_12854_79594 | ||
| 005 | 20220321 | ||
| 020 | |a books978-3-0365-3226-4 | ||
| 020 | |a 9783036532271 | ||
| 020 | |a 9783036532264 | ||
| 024 | 7 | |a 10.3390/books978-3-0365-3226-4 |c doi | |
| 041 | 0 | |a English | |
| 042 | |a dc | ||
| 072 | 7 | |a TB |2 bicssc | |
| 072 | 7 | |a TBX |2 bicssc | |
| 072 | 7 | |a KNB |2 bicssc | |
| 100 | 1 | |a Roccaforte, Fabrizio |4 edt | |
| 700 | 1 | |a Roccaforte, Fabrizio |4 oth | |
| 245 | 1 | 0 | |a Feature Papers in Electronic Materials Section |
| 260 | |a Basel |b MDPI - Multidisciplinary Digital Publishing Institute |c 2022 | ||
| 300 | |a 1 electronic resource (438 p.) | ||
| 506 | 0 | |a Open Access |2 star |f Unrestricted online access | |
| 520 | |a This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book. | ||
| 540 | |a Creative Commons |f https://creativecommons.org/licenses/by/4.0/ |2 cc |4 https://creativecommons.org/licenses/by/4.0/ | ||
| 546 | |a English | ||
| 650 | 7 | |a Technology: general issues |2 bicssc | |
| 650 | 7 | |a History of engineering & technology |2 bicssc | |
| 650 | 7 | |a Energy industries & utilities |2 bicssc | |
| 653 | |a vertical GaN | ||
| 653 | |a quasi-vertical GaN | ||
| 653 | |a reliability | ||
| 653 | |a trapping | ||
| 653 | |a degradation | ||
| 653 | |a MOS | ||
| 653 | |a trench MOS | ||
| 653 | |a threshold voltage | ||
| 653 | |a nanomanufacturing | ||
| 653 | |a high-throughput method | ||
| 653 | |a material printing | ||
| 653 | |a flexible bioelectronics | ||
| 653 | |a nanomembrane | ||
| 653 | |a hybrid integration | ||
| 653 | |a GaAs | ||
| 653 | |a InGaAs channel | ||
| 653 | |a epitaxial lift-off | ||
| 653 | |a HEMT | ||
| 653 | |a van der Waals | ||
| 653 | |a 3C-SiC | ||
| 653 | |a stacking faults | ||
| 653 | |a doping | ||
| 653 | |a KOH etching | ||
| 653 | |a silicon carbide | ||
| 653 | |a radiation hardness | ||
| 653 | |a proton and electron irradiation | ||
| 653 | |a charge removal rate | ||
| 653 | |a compensation | ||
| 653 | |a irradiation temperature | ||
| 653 | |a heteroepitaxy | ||
| 653 | |a bulk growth | ||
| 653 | |a compliant substrates | ||
| 653 | |a defects | ||
| 653 | |a stress | ||
| 653 | |a cubic silicon carbide | ||
| 653 | |a power electronics | ||
| 653 | |a thin film | ||
| 653 | |a iron-based superconductor | ||
| 653 | |a pulsed laser deposition | ||
| 653 | |a transmission electron microscopy | ||
| 653 | |a diamond | ||
| 653 | |a MPCVD growth | ||
| 653 | |a electron microscopy | ||
| 653 | |a chemical vapour deposition | ||
| 653 | |a 2D materials | ||
| 653 | |a MoS2 | ||
| 653 | |a silica point defects | ||
| 653 | |a optical fibers | ||
| 653 | |a radiation effects | ||
| 653 | |a 4H-SiC | ||
| 653 | |a ohmic contact | ||
| 653 | |a SIMS | ||
| 653 | |a Ti3SiC2 | ||
| 653 | |a simulation | ||
| 653 | |a Schottky barrier | ||
| 653 | |a Schottky diodes | ||
| 653 | |a electrical characterization | ||
| 653 | |a graphene absorption | ||
| 653 | |a Fabry-Perot filter | ||
| 653 | |a radio frequency sputtering | ||
| 653 | |a CVD graphene | ||
| 653 | |a GaN | ||
| 653 | |a thermal management | ||
| 653 | |a GaN-on-diamond | ||
| 653 | |a CVD | ||
| 653 | |a arrhythmia detection | ||
| 653 | |a cardiovascular monitoring | ||
| 653 | |a soft biosensors | ||
| 653 | |a wearable sensors | ||
| 653 | |a flexible electronics | ||
| 653 | |a gate dielectric | ||
| 653 | |a aluminum oxide | ||
| 653 | |a interface | ||
| 653 | |a traps | ||
| 653 | |a instability | ||
| 653 | |a insulators | ||
| 653 | |a binary oxides | ||
| 653 | |a high-κ dielectrics | ||
| 653 | |a wide band gap semiconductors | ||
| 653 | |a energy electronics | ||
| 653 | |a ultra-wide bandgap | ||
| 653 | |a diodes | ||
| 653 | |a transistors | ||
| 653 | |a gallium oxide | ||
| 653 | |a Ga2O3 | ||
| 653 | |a spinel | ||
| 653 | |a ZnGa2O4 | ||
| 856 | 4 | 0 | |a www.oapen.org |u https://mdpi.com/books/pdfview/book/4977 |7 0 |z Get Fullteks |
| 856 | 4 | 0 | |a www.oapen.org |u https://directory.doabooks.org/handle/20.500.12854/79594 |7 0 |z DOAB: description of the publication |