Electrical Characterization of Commercial Power MOSFET Under Electron Radiation
This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of...
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| Main Authors: | , , |
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| Format: | EJournal Article |
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Institute of Advanced Engineering and Science,
2017-11-01.
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| Online Access: | Get fulltext |
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| LEADER | 01969 am a22003133u 4500 | ||
|---|---|---|---|
| 001 | ijeecs10015_7649 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Ayub, Wan Nurhasana binti Wan |e author |
| 100 | 1 | 0 | |e contributor |
| 700 | 1 | 0 | |a Hasbullah, Nurul Fadzlin |e author |
| 700 | 1 | 0 | |a Rashid, Abdul Wafi |e author |
| 245 | 0 | 0 | |a Electrical Characterization of Commercial Power MOSFET Under Electron Radiation |
| 260 | |b Institute of Advanced Engineering and Science, |c 2017-11-01. | ||
| 500 | |a https://ijeecs.iaescore.com/index.php/IJEECS/article/view/10015 | ||
| 520 | |a This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiation-induced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage. | ||
| 540 | |a Copyright (c) 2017 Institute of Advanced Engineering and Science | ||
| 540 | |a http://creativecommons.org/licenses/by-nc-nd/4.0 | ||
| 546 | |a eng | ||
| 690 | |||
| 690 | |a commercial power mosfet, threshold voltage shifts, electron radiation | ||
| 655 | 7 | |a info:eu-repo/semantics/article |2 local | |
| 655 | 7 | |a info:eu-repo/semantics/publishedVersion |2 local | |
| 655 | 7 | |2 local | |
| 786 | 0 | |n Indonesian Journal of Electrical Engineering and Computer Science; Vol 8, No 2: November 2017; 462-466 | |
| 786 | 0 | |n 2502-4760 | |
| 786 | 0 | |n 2502-4752 | |
| 786 | 0 | |n 10.11591/ijeecs.v8.i2 | |
| 787 | 0 | |n https://ijeecs.iaescore.com/index.php/IJEECS/article/view/10015/7649 | |
| 856 | 4 | 1 | |u https://ijeecs.iaescore.com/index.php/IJEECS/article/view/10015/7649 |z Get fulltext |