Electrical Characterization of Commercial Power MOSFET Under Electron Radiation
This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of...
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| Main Authors: | , , |
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| Format: | EJournal Article |
| Published: |
Institute of Advanced Engineering and Science,
2017-11-01.
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| Subjects: | |
| Online Access: | Get fulltext |
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |