3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HF...

Cur síos iomlán

Sábháilte in:
Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: F. Roslan, Ameer (Údar), Salehuddin, F. (Údar), M.Zain, A.S (Údar), Kaharudin, K.E (Údar), Hazura, H. (Údar), Hanim, A.R (Údar), Idris, S. K (Údar), Zarina, B.Z (Údar), Maheran A.H, Afifah (Údar)
Formáid: EJournal Article
Foilsithe / Cruthaithe: Institute of Advanced Engineering and Science, 2018-12-01.
Ábhair:
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Rochtain ar líne:Get fulltext
Clibeanna: Cuir clib leis
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!

Ar líne

Get fulltext

3rd Floor Main Library

Sonraí sealbhúcháin ó 3rd Floor Main Library
Gairmuimhir: A1234.567
Cóip 1 Ar fáil

Míreanna comhchosúla