3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HF...

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主要な著者: F. Roslan, Ameer (著者), Salehuddin, F. (著者), M.Zain, A.S (著者), Kaharudin, K.E (著者), Hazura, H. (著者), Hanim, A.R (著者), Idris, S. K (著者), Zarina, B.Z (著者), Maheran A.H, Afifah (著者)
フォーマット: EJournal Article
出版事項: Institute of Advanced Engineering and Science, 2018-12-01.
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info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
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