A comparison of performance between double-gate and gate-all-around nanowire MOSFET
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem. The Double-Gate and Gate-all-Around nanowire MOSFETs are said to be the promising candidate to r...
में बचाया:
| मुख्य लेखकों: | , , |
|---|---|
| स्वरूप: | EJournal Article |
| प्रकाशित: |
Institute of Advanced Engineering and Science,
2019-02-01.
|
| विषय: | |
| ऑनलाइन पहुंच: | Get fulltext |
| टैग : |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|
इंटरनेट
Get fulltext3rd Floor Main Library
| बोधानक: |
A1234.567 |
|---|---|
| प्रति 1 | उपलब्ध |