A comparison of performance between double-gate and gate-all-around nanowire MOSFET
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem. The Double-Gate and Gate-all-Around nanowire MOSFETs are said to be the promising candidate to r...
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| Glavni autori: | , , |
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| Format: | EJournal Article |
| Izdano: |
Institute of Advanced Engineering and Science,
2019-02-01.
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| Online pristup: | Get fulltext |
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