A comparison of performance between double-gate and gate-all-around nanowire MOSFET
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem. The Double-Gate and Gate-all-Around nanowire MOSFETs are said to be the promising candidate to r...
Bewaard in:
| Hoofdauteurs: | , , |
|---|---|
| Formaat: | EJournal Article |
| Gepubliceerd in: |
Institute of Advanced Engineering and Science,
2019-02-01.
|
| Onderwerpen: | |
| Online toegang: | Get fulltext |
| Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|
Internet
Get fulltext3rd Floor Main Library
| Plaatsingsnummer: |
A1234.567 |
|---|---|
| Kopie 1 | Beschikbaar |