A comparison of performance between double-gate and gate-all-around nanowire MOSFET

A comparison of performance between double-gate and gate-all-around nanowire MOSFET

Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem. The Double-Gate and Gate-all-Around nanowire MOSFETs are said to be the promising candidate to r...

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Asıl Yazarlar: Fareza Kosmani, Nor (Yazar), A.Hamid, Fatimah (Yazar), Razali, M. Anas (Yazar)
Materyal Türü: EJournal Article
Baskı/Yayın Bilgisi: Institute of Advanced Engineering and Science, 2019-02-01.
Konular:
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
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