Optimization of high-k composite dielectric materials of variable oxide thickness tunnel barrier for nonvolatile memory
Downscaling the tunnel oxide thickness has become one of the innovative solutions to minimize the operational voltage with better the programming/erasing (P/E) operation time. However, the downscaling technique faces several challenges where the conventional SiO2 tunnel layer has reached its limit....
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| Main Authors: | , , , |
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| Format: | EJournal Article |
| Published: |
Institute of Advanced Engineering and Science,
2019-05-01.
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| Subjects: | |
| Online Access: | Get fulltext |
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |