Reverse biased nanocrystalline graphite (NCG)/p-Si schottky junction for methane gas sensor

An investigation on the effect of the reverse biased operation of NCG/p-Si Schottky contact during methane gas exposure at room temperature has been presented. The experimental results show the larger current shift at the reverse bias operation, compared to the forward bias by exposing to methane ga...

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Main Authors: Nawawi, A. A. (Author), Sultan, S.M (Author), Rahmah, S.F.A (Author), Khalid, P.I (Author), Pu, S.H (Author)
Format: EJournal Article
Published: Institute of Advanced Engineering and Science, 2019-09-01.
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042 |a dc 
100 1 0 |a Nawawi, A. A.  |e author 
100 1 0 |e contributor 
700 1 0 |a Sultan, S.M.  |e author 
700 1 0 |a Rahmah, S.F.A.  |e author 
700 1 0 |a Khalid, P.I.  |e author 
700 1 0 |a Pu, S.H.  |e author 
245 0 0 |a Reverse biased nanocrystalline graphite (NCG)/p-Si schottky junction for methane gas sensor 
260 |b Institute of Advanced Engineering and Science,   |c 2019-09-01. 
500 |a https://ijeecs.iaescore.com/index.php/IJEECS/article/view/19388 
520 |a An investigation on the effect of the reverse biased operation of NCG/p-Si Schottky contact during methane gas exposure at room temperature has been presented. The experimental results show the larger current shift at the reverse bias operation, compared to the forward bias by exposing to methane gas. This can be attributed to the adsorption of methane gas into the metal surface layer and produces a negative charge at the junction, thus reduces the barrier height of the device. The reverse barrier height was calculated under the reverse bias condition, demonstrated the value decreased from 0.58-0.53eV towards a higher concentration of methane gas. The Schottky junction also affected by the increase in a free carrier when exposure to the reducing gas such as methane. Raman spectra are reported to be detected at G, D and 2D band with the grain size 1.88nm to exhibit single crystallite graphite properties. The results correlate well with the 3D AFM scans reveal the RMS surface roughness of 1.1 to 2.8nm. 
540 |a Copyright (c) 2019 Institute of Advanced Engineering and Science 
540 |a http://creativecommons.org/licenses/by-nc/4.0 
546 |a eng 
690
690 |a Nanocrystalline graphite, Methane, Schottky diode, Barrier height, Reverse biased 
655 7 |a info:eu-repo/semantics/article  |2 local 
655 7 |a info:eu-repo/semantics/publishedVersion  |2 local 
655 7 |2 local 
786 0 |n Indonesian Journal of Electrical Engineering and Computer Science; Vol 15, No 3: September 2019; 1217-1222 
786 0 |n 2502-4760 
786 0 |n 2502-4752 
786 0 |n 10.11591/ijeecs.v15.i3 
787 0 |n https://ijeecs.iaescore.com/index.php/IJEECS/article/view/19388/12958 
856 4 1 |u https://ijeecs.iaescore.com/index.php/IJEECS/article/view/19388/12958  |z Get fulltext