Work function variations on electrostatic and RF performances of JLSDGM Device
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under o...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | EJournal Article |
| Publicado: |
Institute of Advanced Engineering and Science,
2021-07-01.
|
| Materias: | |
| Acceso en línea: | Get fulltext |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Internet
Get fulltext3rd Floor Main Library
| Número de Clasificación: |
A1234.567 |
|---|---|
| Copia 1 | Disponible |