Work function variations on electrostatic and RF performances of JLSDGM Device
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under o...
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| Päätekijät: | , , , , |
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| Aineistotyyppi: | EJournal Article |
| Julkaistu: |
Institute of Advanced Engineering and Science,
2021-07-01.
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| Linkit: | Get fulltext |
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| Hyllypaikka: |
A1234.567 |
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| Nide 1 | Saatavissa |