Work function variations on electrostatic and RF performances of JLSDGM Device
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under o...
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| Автори: | , , , , |
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| Формат: | EJournal Article |
| Опубліковано: |
Institute of Advanced Engineering and Science,
2021-07-01.
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| Предмети: | |
| Онлайн доступ: | Get fulltext |
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| Шифр: |
A1234.567 |
|---|---|
| Примірник 1 | Доступно |