Layout Effects on High Frequency and Noise Parameters in MOSFETs

Layout Effects on High Frequency and Noise Parameters in MOSFETs

This study reviews related studies on the impact of the layout dependent effects on high frequency and RF noise parameter performances, carried out over the past decade. It specifically focuses on the doughnut and multi- finger layouts. The doughnut style involves the polygonal and the 4- sided tech...

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Main Authors: Nur Aqilah Zainal Badri, Asmaa (Author), Mohd Noh, Norlaili (Author), bin Korakkottil Kunhi Mohd, Shukri (Author), Abd Manaf, Asrulnizam (Author), Marzuki, Arjuna (Author), Tafir Mustaffa, Mohd (Author)
Format: EJournal Article
Published: Institute of Advanced Engineering and Science, 2017-04-01.
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