IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are investigated by using a small signal simulation tech...
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| Format: | Ebooks |
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IntechOpen,
2021-03-17.
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |