Epitaxial Growth of Ge on Si by Magnetron Sputtering

Epitaxial growth of Ge on Si has received considerable attention for its compatibility with Si process flow and the scarcity of Ge compared with Si. Applications that drive the efforts for integrating Ge with Si include high mobility channel in metal-oxide-semiconductor field-effect transistors, inf...

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Príomhchruthaitheoirí: Liu, Ziheng (Údar), Hao, Xiaojing (Údar), Ho-Baillie, Anita (Údar), Green, Martin A. (Údar)
Formáid: Ebooks
Foilsithe / Cruthaithe: IntechOpen, 2018-03-07.
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