Recent Progress in AlGaN Deep-UV LEDs
AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have a wide variety of potential applications, including uses for sterilization, water purification, and UV curing and in the medical and biochemistry fields. However, the wall-plug efficiency (WPE) of AlGaN DUV LEDs remains below values. We ha...
Saved in:
| Main Author: | |
|---|---|
| Format: | Ebooks |
| Published: |
IntechOpen,
2018-09-19.
|
| Subjects: | |
| Online Access: | Get Online |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| LEADER | 01977 am a22001933u 4500 | ||
|---|---|---|---|
| 001 | intechopen_books_6489 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Hirayama, Hideki |e author |
| 245 | 0 | 0 | |a Recent Progress in AlGaN Deep-UV LEDs |
| 260 | |b IntechOpen, |c 2018-09-19. | ||
| 500 | |a https://mts.intechopen.com/articles/show/title/recent-progress-in-algan-deep-uv-leds | ||
| 520 | |a AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have a wide variety of potential applications, including uses for sterilization, water purification, and UV curing and in the medical and biochemistry fields. However, the wall-plug efficiency (WPE) of AlGaN DUV LEDs remains below values. We have developed crystal growth techniques for wide-bandgap AlN and AlGaN and, using these techniques, fabricated DUV LEDs in the 220-350 nm-band. Considerable increases in the internal quantum efficiency (IQE) of AlGaN quantum wells (QW) were achieved by developing low-threading dislocation density (TDD) AlN grown on sapphire substrates. The electron injection efficiency (EIE) was substantially increased by introducing a multi-quantum barrier (MQB) as an electron-blocking layer (EBL). The light-extraction efficiency (LEE) was also improved by using a transparent p-AlGaN contact layer, a highly reflective (HR) p-type electrode, and an AlN template fabricated on a patterned sapphire substrate (PSS). Further improvements were made by implementing a reflective photonic crystal (PhC) p-contact layer. We demonstrated a record external quantum efficiency (EQE) of 20.3% for an AlGaN UVC-LED. | ||
| 540 | |a https://creativecommons.org/licenses/by/3.0/ | ||
| 546 | |a en | ||
| 690 | |a Light-Emitting Diode - An Outlook On the Empirical Features and Its Recent Technological Advancements | ||
| 655 | 7 | |a Chapter, Part Of Book |2 local | |
| 786 | 0 | |n https://www.intechopen.com/books/6489 | |
| 787 | 0 | |n ISBN:978-1-78923-750-4 | |
| 856 | \ | \ | |u https://mts.intechopen.com/articles/show/title/recent-progress-in-algan-deep-uv-leds |z Get Online |