SIMULASI DISTRIBUSI KONSENTRASI ELEKTRON KRISTAL SEMIKONDUKTOR GaAs PADA PERISTIWA DEFORMATION POTENTIAL SCATTERING BERBASIS METODE ELEMEN HINGGA
Kristal semikonduktor Gallium Arsenida (GaAs) merupakan salah satu jenis material semikonduktor paduan yang terdiri dari gabungan unsur Gallium (golongan IIIA) dan Arsen (golongan VA). Material ini banyak diaplikasikan dalam pembuatan divais elektronika seperti LED, dioda laser maupun transistor, di...
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Main Author: | Alviati, Nova (Author) |
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Format: | Academic Paper |
Published: |
2016-02-23T03:32:32Z.
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Online Access: | Get Fulltext |
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