Magnetic sensitivity modeling of dual gate MOS transistor
In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. Th...
Spremljeno u:
| Glavni autori: | , |
|---|---|
| Format: | EJournal Article |
| Izdano: |
Institute of Advanced Engineering and Science,
2021-11-01.
|
| Teme: | |
| Online pristup: | Get fulltext Get fulltext |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|
Internet
Get fulltextGet fulltext
3rd Floor Main Library
| Signatura: |
A1234.567 |
|---|---|
| Primjerak 1 | Dostupno |