Magnetic sensitivity modeling of dual gate MOS transistor
In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. Th...
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| Materialtyp: | EJournal Article |
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Institute of Advanced Engineering and Science,
2021-11-01.
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