Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer
The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material. In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built in potential due to the diffusion activi...
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| Main Authors: | , , , , |
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| Format: | EJournal Article |
| Published: |
Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember,
2018-11-10.
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| Subjects: | |
| Online Access: | Get Fulltext |
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |