Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer
The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material. In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built in potential due to the diffusion activi...
Gorde:
| Egile Nagusiak: | , , , , |
|---|---|
| Formatua: | EJournal Article |
| Argitaratua: |
Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember,
2018-11-10.
|
| Gaiak: | |
| Sarrera elektronikoa: | Get Fulltext |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|
Internet
Get Fulltext3rd Floor Main Library
| Sailkapena: |
A1234.567 |
|---|---|
| Alea 1 | Eskuragarri |