Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer
The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material. In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built in potential due to the diffusion activi...
Shranjeno v:
Main Authors: | , , , , |
---|---|
Format: | EJournal Article |
Izdano: |
Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember,
2018-11-10.
|
Teme: | |
Online dostop: | Get Fulltext |
Oznake: |
Označite
Brez oznak, prvi označite!
|
Internet
Get Fulltext3rd Floor Main Library
Signatura: |
A1234.567 |
---|---|
Kopija 1 | Prosto |