Micro- and Nanotechnology of Wide Bandgap Semiconductors
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...
Spremljeno u:
Daljnji autori: | , , |
---|---|
Format: | Poglavlje knjige |
Izdano: |
Basel, Switzerland
MDPI - Multidisciplinary Digital Publishing Institute
2021
|
Teme: | |
Online pristup: | Get Fullteks DOAB: description of the publication |
Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|
Internet
Get FullteksDOAB: description of the publication
3rd Floor Main Library
Signatura: |
A1234.567 |
---|---|
Primjerak 1 | Dostupno |