Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application
Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a proble...
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| Hoofdauteurs: | , , , , , , |
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| Formaat: | EJournal Article |
| Gepubliceerd in: |
Institute of Advanced Engineering and Science,
2018-06-01.
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| Plaatsingsnummer: |
A1234.567 |
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| Kopie 1 | Beschikbaar |