Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application

Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application

Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a proble...

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Main Authors: Zainal Badri, Asmaa Nur Aqilah (Author), Noh, Norlaili Mohd (Author), Kunhi Mohd, Shukri bin Korakkottil (Author), Manaf, Asrulnizam Abd (Author), Marzuki, Arjuna (Author), Mustaffa, Mohd Tafir (Author), Packeer Mohamed, Mohamed Fauzi (Author)
Format: EJournal Article
Published: Institute of Advanced Engineering and Science, 2018-06-01.
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info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
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Summary:Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NFmin) for frequencies below 3 GHz.
Item Description:https://ijeecs.iaescore.com/index.php/IJEECS/article/view/11988

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