Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughou...

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Main Authors: F. Roslan, Ameer (Author), Salehuddin, F. (Author), M. Zain, A.S (Author), Kaharudin, K.E (Author), Ahmad, I. (Author), Hazura, H. (Author), Hanim, A.R (Author), Idris, S.K (Author)
Format: EJournal Article
Published: Institute of Advanced Engineering and Science, 2019-05-01.
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info:eu-repo/semantics/article
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