Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures
This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughou...
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Main Authors: | F. Roslan, Ameer (Author), Salehuddin, F. (Author), M. Zain, A.S (Author), Kaharudin, K.E (Author), Ahmad, I. (Author), Hazura, H. (Author), Hanim, A.R (Author), Idris, S.K (Author) |
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Format: | EJournal Article |
Published: |
Institute of Advanced Engineering and Science,
2019-05-01.
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Online Access: | Get fulltext |
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