Optimization of 16 nm DG-FinFET using L25 orthogonal array of taguchi statistical method
The impact of the optimization using Taguchi statistical method towards the electrical properties of a 16 nm double-gate FinFET (DG-FinFET) is investigated and analyzed. The inclusion of drive current (ION), leakage current (IOFF), and threshold voltage (VTH) as part of electrical properties present...
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| Main Authors: | , , , , |
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| Format: | EJournal Article |
| Published: |
Institute of Advanced Engineering and Science,
2020-06-01.
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| Subjects: | |
| Online Access: | Get fulltext |
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |