Dual-band doherty power amplifier with improved reactance compensation
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the...
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| Main Authors: | , , |
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| Format: | EJournal Article |
| Published: |
Institute of Advanced Engineering and Science,
2021-09-01.
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| Subjects: | |
| Online Access: | Get fulltext |
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |