Dual-band doherty power amplifier with improved reactance compensation
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the...
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| Main Authors: | , , |
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| Format: | EJournal Article |
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Institute of Advanced Engineering and Science,
2021-09-01.
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| Online Access: | Get fulltext |
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| LEADER | 01936 am a22003133u 4500 | ||
|---|---|---|---|
| 001 | ijeecs25863_15475 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Yu, Li M. |e author |
| 100 | 1 | 0 | |e contributor |
| 700 | 1 | 0 | |a Aridas, Narendra K. |e author |
| 700 | 1 | 0 | |a Latef, Tarik A. |e author |
| 245 | 0 | 0 | |a Dual-band doherty power amplifier with improved reactance compensation |
| 260 | |b Institute of Advanced Engineering and Science, |c 2021-09-01. | ||
| 500 | |a https://ijeecs.iaescore.com/index.php/IJEECS/article/view/25863 | ||
| 520 | |a In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43% and 47%, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively. | ||
| 540 | |a Copyright (c) 2021 Institute of Advanced Engineering and Science | ||
| 540 | |a http://creativecommons.org/licenses/by-nc/4.0 | ||
| 546 | |a eng | ||
| 690 | |||
| 690 | |a Doherty; Dual-band; Power amplifier; | ||
| 655 | 7 | |a info:eu-repo/semantics/article |2 local | |
| 655 | 7 | |a info:eu-repo/semantics/publishedVersion |2 local | |
| 655 | 7 | |2 local | |
| 786 | 0 | |n Indonesian Journal of Electrical Engineering and Computer Science; Vol 23, No 3: September 2021; 1550-1556 | |
| 786 | 0 | |n 2502-4760 | |
| 786 | 0 | |n 2502-4752 | |
| 786 | 0 | |n 10.11591/ijeecs.v23.i3 | |
| 787 | 0 | |n https://ijeecs.iaescore.com/index.php/IJEECS/article/view/25863/15475 | |
| 856 | 4 | 1 | |u https://ijeecs.iaescore.com/index.php/IJEECS/article/view/25863/15475 |z Get fulltext |