Heteroepitaxial Growth of III-V Semiconductors on 2D Materials
Quasi van der Waals epitaxy (QvdWE) of III-V semiconductors on two-dimensional layered material, such as graphene, is discussed. Layered materials are used as a lattice mismatch/thermal expansion coefficient mismatch-relieving layer to integrate III-V semiconductors on any arbitrary substrates. In t...
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| Main Authors: | , , , |
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| Format: | Ebooks |
| Published: |
IntechOpen,
2016-08-31.
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| Subjects: | |
| Online Access: | Get Online |
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Internet
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |