Heteroepitaxial Growth of III-V Semiconductors on 2D Materials
Quasi van der Waals epitaxy (QvdWE) of III-V semiconductors on two-dimensional layered material, such as graphene, is discussed. Layered materials are used as a lattice mismatch/thermal expansion coefficient mismatch-relieving layer to integrate III-V semiconductors on any arbitrary substrates. In t...
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| Main Authors: | , , , |
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| Format: | Ebooks |
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IntechOpen,
2016-08-31.
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| Summary: | Quasi van der Waals epitaxy (QvdWE) of III-V semiconductors on two-dimensional layered material, such as graphene, is discussed. Layered materials are used as a lattice mismatch/thermal expansion coefficient mismatch-relieving layer to integrate III-V semiconductors on any arbitrary substrates. In this chapter, the epitaxial growth of both III-V nanowires and thin films on two-dimensional layered materials is presented. Also, the growth challenges of thin film on two-dimensional materials using QvdWE are discussed through density functional theory calculations. Furthermore, optoelectronic devices of III-V semiconductors integrated on two-dimensional layered material based on QvdWE are overviewed to prove the future potential and importance of such type of epitaxy. |
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| Item Description: | https://mts.intechopen.com/articles/show/title/heteroepitaxial-growth-of-iii-v-semiconductors-on-2d-materials |