Resonant Tunneling and Two‐dimensional Gate Transistors
In this chapter, a new type of field-effect transistors is considered with a gate and a channel on a basis of two-dimensional systems of carriers. The key point of the device is that the systems are different. In particular, they are formed in different quantum wells or valleys of the carriers spect...
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| Format: | Ebooks |
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IntechOpen,
2017-06-07.
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| Online Access: | Get Online |
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| Call Number: |
A1234.567 |
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| Copy 1 | Available |